Method for manufacturing electronic component

ABSTRACT

In a method for manufacturing an electronic component, a step of providing an outer electrode includes a step of providing a sintered layer including a sintered metal, a step of providing a reinforcement layer not containing Sn but including Cu or Ni, a step of providing an insulation layer, and a step of providing a Sn-containing layer. The sintered layer extends from each end surface of an element assembly onto at least one main surface thereof to cover Bich. The reinforcement layer covers the sintered layer entirely. The insulation layer is directly provided on the reinforcement layer at each end surface of the element assembly and defines a portion of a surface of the outer electrode. The Sn-containing layer covers the reinforcement layer except for a portion of the reinforcement layer that is covered by the insulation layer, and defines another portion of the surface of the outer electrode.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to electronic components and methods formanufacturing the electronic components, specifically to electroniccomponents mounted by soldering and methods for manufacturing theelectronic components.

2. Description of the Related Art

Japanese Unexamined Patent Application Publication No. 2003-22929describes a multilayer ceramic capacitor in which an occurrence of ashort circuit of inner electrodes due to a crack generated by thermalcontraction of a solder fillet is suppressed.

In the multilayer ceramic capacitor disclosed in Japanese UnexaminedPatent Application Publication No. 2003-22929, in the case where a crackis generated in an element assembly in the vicinity of one outerelectrode thereof by tension of a solder fillet, inner electrodesconnected to the other outer electrode are prevented from being exposedin a gap of the crack. This suppresses the occurrence of a short circuitof the inner electrodes when moisture enters into the crack.

In the case where a crack is generated in the element assembly bytensile stress due to thermal contraction of the solder fillet andcauses the inner electrodes to be cut, electrostatic capacity of themultilayer ceramic capacitor drops. As described above, in the casewhere a crack is generated in an electronic component by tensile stressdue to thermal contraction of a solder fillet, electric characteristicsof the electronic component are deteriorated as a result.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide electroniccomponents and methods for manufacturing electronic components in whichan occurrence of a crack in an element assembly by tensile stress due tothermal contraction of a solder fillet is significantly reduced orprevented.

An electronic component according to a preferred embodiment of thepresent invention includes an element assembly in which inner electrodesare embedded and that includes a pair of main surfaces, a pair of sidesurfaces respectively connecting the main surfaces, and a pair of endsurfaces respectively perpendicular or substantially perpendicular tothe pair of main surfaces and the pair of side surfaces; and an outerelectrode provided on a surface of the element assembly and electricallyconnected with the inner electrodes. In the electronic component, theouter electrode includes a sintered layer including a sintered metal, areinforcement layer that does not contain Sn but contains Cu or Ni, aninsulation layer including an electric insulation material, and aSn-containing layer including Sn. The sintered layer extends from eachof the end surfaces onto at least one of the main surfaces so as tocover each of the end surfaces. The reinforcement layer covers theentirety of the sintered layer. The insulation layer is directlyprovided on the reinforcement layer at each of the end surfaces so as toextend in a direction perpendicular or substantially perpendicular tothe side surfaces and defines a portion of a surface of the outerelectrode. The Sn-containing layer covers the reinforcement layer exceptfor a portion of the reinforcement layer that is covered by theinsulation layer and defines another portion of the surface of the outerelectrode.

The Sn-containing layer preferably extends from each of the end surfacesto one of the main surfaces.

None of the inner electrodes preferably are located in a virtual planethat links the position of an edge on one of the main surfaces of theinsulation layer at the end surface with the position of a tip of theouter electrode on one of the main surfaces in a shortest distance.

The insulation layer preferably is provided on the reinforcement layerat each of the end surfaces so that at least a portion of the insulationlayer is located between one of the main surfaces and the position of anedge portion of the inner electrode closest to one of the main surfacesin a direction perpendicular or substantially perpendicular to the mainsurface.

The sintered layer preferably further extends from each of the endsurfaces onto each of the side surfaces. The insulation layer is furtherprovided on the reinforcement layer at each of the side surfaces so asto extend in a direction perpendicular or substantially perpendicular tothe end surface.

The outer electrode preferably further includes a base layer which ismade of a material different from that of the reinforcement layer andcontains Cu or Ni. The base layer is provided between the sintered layerand the reinforcement layer so as to cover the entirety of the sinteredlayer.

The outer electrode preferably further includes a shield layer which ismade of a material different from that of the reinforcement layer andcontains Cu or Ni. The shield layer is provided between thereinforcement layer and the Sn-containing layer.

A method for manufacturing an electronic component according to anotherpreferred embodiment of the present invention includes the steps ofpreparing an element assembly in which inner electrodes are embedded andincluding a pair of main surfaces, a pair of side surfaces respectivelyconnecting the main surfaces, and a pair of end surfaces respectivelyperpendicular or substantially perpendicular to the pair of mainsurfaces and the pair of side surfaces; and providing an outer electrodeon a surface of the element assembly so that the outer electrode iselectrically connected with the inner electrodes. The step of providingthe outer electrode includes a step of providing a sintered layerincluding a sintered metal, a step of providing a reinforcement layerthat does not contain Sn but includes Cu or Ni, a step of providing aninsulation layer including an electric insulation material, and a stepof providing a Sn-containing layer including Sn. In the step ofproviding the sintered layer, the sintered layer extends from each ofthe end surfaces onto at least one of the main surfaces so as to covereach of the end surfaces. In the step of providing the reinforcementlayer, the reinforcement layer is provided so as to cover the entiretyof the sintered layer. In the step of providing the insulation layer,the insulation layer is directly provided on the reinforcement layer ateach of the end surfaces to extend in a direction perpendicular orsubstantially perpendicular to the side surface so as to define aportion of a surface of the outer electrode. In the step of providingthe Sn-containing layer, the Sn-containing layer is provided to coverthe reinforcement layer except for a portion of the reinforcement layerthat is covered by the insulation layer so as to define another portionof the surface of the outer electrode.

In the step of providing the Sn-containing layer, the Sn-containinglayer preferably extends from each of the end surfaces to one of themain surfaces.

In the step of providing the outer electrode, the outer electrodepreferably is provided so that none of the inner electrodes are locatedin a virtual plane which links the position of an edge of the insulationlayer at the end surface on one of the main surfaces with the positionof a tip of the outer electrode on one of the main surfaces in ashortest distance.

In the step of providing the insulation layer, the insulation layerpreferably is provided on the reinforcement layer at each of the endsurfaces so that at least a portion of the insulation layer is locatedbetween one of the main surfaces and the position of an edge portion ofthe inner electrode closest to one of the main surfaces in a directionperpendicular or substantially perpendicular to the main surface.

In the step of providing the sintered layer, the sintered layerpreferably is provided so as to further extend from each of the endsurfaces onto each of the side surfaces. In the step of providing theinsulation layer, the insulation layer preferably is further provideddirectly on the reinforcement layer at each of the side surfaces so asto extend in a direction perpendicular or substantially perpendicular tothe end surface.

The step of providing the outer electrode preferably further includes aprocess of providing a base layer which is formed of a materialdifferent from that of the reinforcement layer and contains Cu or Ni. Inthe step of providing the base layer, the base layer preferably isprovided between the sintered layer and the reinforcement layer so as tocover the entirety of the sintered layer.

The step of providing the outer electrode preferably further includes aprocess of providing a shield layer which is formed of a materialdifferent from that of the reinforcement layer and contains Cu or Ni. Inthe step of providing the shield layer, the shield layer preferably isprovided between the reinforcement layer and the Sn-containing layer.

In the step of providing the sintered layer, a dielectric layer includedin the element assembly and the sintered layer preferably are baked atthe same time.

According to various preferred embodiments of the present invention, anoccurrence of a crack in an element assembly caused by tensile stressdue to thermal contraction of a solder fillet is significantly reducedor prevented.

The above and other elements, features, steps, characteristics andadvantages of the present invention will become more apparent from thefollowing detailed description of the preferred embodiments withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view illustrating an external appearance of anelectronic component according to a first preferred embodiment of thepresent invention.

FIG. 2 is a cross-sectional view of the electronic component taken alonga II-II arrow line in FIG. 1.

FIG. 3 is a cross-sectional view of the electronic component taken alonga III-III arrow line in FIG. 2.

FIG. 4 is a cross-sectional view of the electronic component taken alonga IV-IV arrow line in FIG. 2.

FIG. 5 is a cross-sectional view of the electronic component taken alonga V-V arrow line in FIG. 2.

FIG. 6 is a flowchart illustrating a method for manufacturing anelectronic component according to the first preferred embodiment of thepresent invention.

FIG. 7 is a perspective view illustrating a state in which theelectronic component according to the first preferred embodiment ismounted on a substrate by soldering.

FIG. 8 is a cross-sectional view illustrating a configuration of anelectronic component according to a second preferred embodiment of thepresent invention.

FIG. 9 is a flowchart illustrating a method for manufacturing theelectronic component according to the second preferred embodiment of thepresent invention.

FIG. 10 is a cross-sectional view illustrating a configuration of anelectronic component according to a third preferred embodiment of thepresent invention.

FIG. 11 is a flowchart illustrating a method for manufacturing theelectronic component according to the third preferred embodiment of thepresent invention.

FIG. 12 is a perspective view illustrating an external appearance of anelectronic component according to a fourth preferred embodiment of thepresent invention.

FIG. 13 is a cross-sectional view of the electronic component takenalong a XIII-XIII arrow line in FIG. 12.

FIG. 14 is a perspective view illustrating an external appearance of anelectronic component according to a fifth preferred embodiment of thepresent invention.

FIG. 15 is a cross-sectional view of the electronic component takenalong a XV-XV arrow line in FIG. 14.

FIG. 16 is a cross-sectional view of the electronic component takenalong a XVI-XVI arrow line in FIG. 14.

FIG. 17 is a cross-sectional view of the electronic component takenalong a XVII-XVII arrow line in FIG. 15 and of the electronic componenttaken along the XVII-XVII arrow line in FIG. 16.

FIG. 18 is a cross-sectional view of the electronic component takenalong a XVIII-XVIII arrow line in FIG. 15 and of the electroniccomponent taken along the XVIII-XVIII arrow line in FIG. 16.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, electronic components according to preferred embodiments ofthe present invention will be described with reference to the drawings.In the following description of the preferred embodiments, identical orequivalent members in the drawings are given identical referencenumerals and description thereof is not repeated. Further, in thefollowing description, although a multilayer ceramic capacitor will beexplained as an electronic component, the electronic component is notintended to be limited to the multilayer ceramic capacitor, and may be apiezoelectric component, a thermistor, an inductor, or the like.

First Preferred Embodiment

FIG. 1 is a perspective view illustrating an external appearance of anelectronic component according to a first preferred embodiment of thepresent invention. FIG. 2 is a cross-sectional view of the electroniccomponent taken along a II-II arrow line in FIG. 1. FIG. 3 is across-sectional view of the electronic component taken along a III-IIIarrow line in FIG. 2. FIG. 4 is a cross-sectional view of the electroniccomponent taken along a IV-IV arrow line in FIG. 2. FIG. 5 is across-sectional view of the electronic component taken along a V-V arrowline in FIG. 2. In FIG. 1, a lengthwise direction of an elementassembly, which will be explained later in detail, is indicated by “L”,a width direction of the element assembly is indicated by “W”, and athickness direction of the element assembly is indicated by “T”.

As shown in FIGS. 1 through 5, an electronic component 100 according tothe first preferred embodiment of the present invention includes aparallelepiped-shaped element assembly 110 in which inner electrodes 130are embedded, and an outer electrode 120 provided on a surface of theelement assembly 110 and electrically connected with the innerelectrodes 130.

In the element assembly 110, dielectric layers 140 and the innerelectrodes 130 having a plate-shaped are alternately stacked. A stackingdirection of the dielectric layers 140 and the inner electrodes 130 isperpendicular or substantially perpendicular to both the lengthwisedirection L of the element assembly 110 and the width direction W of theelement assembly 110. In other words, the stacking direction of thedielectric layers 140 and the inner electrodes 130 is parallel orsubstantially parallel to the thickness direction T of the elementassembly 110.

The element assembly 110 includes a pair of main surfaces perpendicularor substantially perpendicular to the thickness direction T, a pair ofend surfaces perpendicular or substantially perpendicular to thelengthwise direction L, and a pair of side surfaces perpendicular orsubstantially perpendicular to the width direction W. The pair of mainsurfaces includes one main surface 10 and the other main surface 11. Theone main surface 10 is a surface positioned on a mounting surface sideof the electronic component 100 when mounted. In other words, when theelectronic component 100 is mounted on a substrate, the one main surface10 is a surface that opposes the substrate.

As described above, the element assembly 110 includes the pair of mainsurfaces perpendicular or substantially perpendicular to the stackingdirection of the dielectric layers 140 and the inner electrodes 130, thepair of side surfaces respectively connecting the main surfaces, and thepair of end surfaces respectively perpendicular or substantiallyperpendicular to the pair of main surfaces and the pair of sidesurfaces.

Although the element assembly 110 preferably is parallelepiped shapedwith its corners being rounded, the corners of the assembly may not berounded. Furthermore, concave and/or convex portions may be provided inany one of the surfaces included in the pair of main surfaces, the pairof end surfaces, or the pair of side surfaces.

In the inner electrodes 130 adjacent to each other and opposing eachother, one inner electrode 130 is electrically connected with the outerelectrode 120 at one end surface of the element assembly 110, while theother inner electrode 130 is electrically connected with the outerelectrode 120 at the other end surface of the element assembly 110.

Details of the constituent elements will be described hereinafter.

As a material that configures the dielectric layer 140, dielectricceramics whose major component is BaTiO₃, CaTiO₃, SrTiO₃, CaZrO₃, or thelike can be used. Further, a material in which a Mn compound, a Cocompound, a Si compound, a rare earth compound, or the like is added asan accessory component to the above major component, may be used.

The inner electrodes 130 preferably have a rectangular or approximatelyrectangular shape when viewed from above. The inner electrodes 130adjacent to each other in the stacking direction oppose each othersandwiching the dielectric layer 140 therebetween. The one innerelectrodes 130 and the other inner electrodes 130 mentioned above arealternately disposed at equal or substantially equal intervals along thethickness direction T of the element assembly 110.

The one inner electrode 130 extends from one end surface of the elementassembly 110 toward the other end surface thereof. As shown in FIG. 3,the one inner electrode 130 is connected with a sintered layer 121 ofthe outer electrode 120, which will be explained later, at the one endsurface of the element assembly 110.

The other inner electrode 130 extends from the other end surface of theelement assembly 110 toward the one end surface thereof. As shown inFIG. 4, the other inner electrode 130 is connected with the sinteredlayer 121 of the outer electrode 120, which will be explained later, atthe other end surface of the element assembly 110.

As a material that configures the inner electrode 130, a metal such asNi, Cu, Ag, Pd, Au, Pt, Sn or the like, or an alloy including at leastone of the above metals, for example, an alloy including Ag and Pd, canbe used. In the present preferred embodiment, the inner electrode 130preferably is made of Ni, for example.

As shown in FIG. 2, the outer electrode 120 includes the sintered layer121 containing a sintered metal, a reinforcement layer 122 that does notcontain Sn but includes Cu or Ni, an insulation layer 123 including anelectric insulation material, and a Sn-containing layer 124 thatcontains Sn.

The sintered layer 121 extends from each of the end surfaces onto atleast the one main surface 10 so as to cover the end surfaces of theelement assembly 110. In the present preferred embodiment, the sinteredlayer 121 extends from the one end surface onto both the main surfacesand the side surfaces while covering the whole one end surface of theelement assembly 110. Further, the sintered layer 121 extends from theother end surface onto both the main surfaces and the side surfaceswhile covering the whole the other end surface of the element assembly110. The sintered layer 121 extending from the one end surface of theelement assembly 110 onto both the main surfaces and the side surfacesthereof and the sintered layer 121 extending from the other end surfaceof the element assembly 110 onto both the main surfaces and the sidesurfaces thereof, are separated from each other and not electricallyconnected.

As a material that configures the sintered layer 121, a metal such asNi, Cu, Ag, Pd or the like, or a conductive paste whose major componentis an alloy containing at least one of the above metals, can be used. Inthe present preferred embodiment, a conductive paste whose majorcomponent is Cu is applied on the surface of the element assembly 110and heated at a temperature of approximately 700° C., for example, sothat the sintered layer 121 is baked and fixed to the element assembly110. The sintered layer 121 includes a glass component. In the sinteredlayer 121, the glass content percentage is higher in a surface layerportion than in an inside portion.

The reinforcement layer 122 is directly provided on the sintered layer121 so as to cover the entirety of the sintered layer 121. In thepresent preferred embodiment, the sintered layer 121 extends from theone end surface of the element assembly 110 onto the main surfaces andthe side surfaces of the element assembly 110. Further, the sinteredlayer 121 extends from the other end surface of the element assembly 110onto the main surfaces and the side surfaces of the element assembly110.

As such, the reinforcement layer 122 extends from the one end surface ofthe element assembly 110 onto the main surfaces and the side surfaces ofthe element assembly 110. Further, the reinforcement layer 122 extendsfrom the other end surface of the element assembly 110 onto the mainsurfaces and the side surfaces of the element assembly 110.

As a material that configures the reinforcement layer 122, a materialthat does not contain Sn such as Ni, a Ni alloy, Cu, or a Cu alloy canbe used. In the present preferred embodiment, the reinforcement layerpreferably is made of Ni, for example.

The insulation layer 123 is directly provided on the reinforcement layer122 at each of the end surfaces so as to extend in the width directionW, which is a direction perpendicular or substantially perpendicular tothe side surface of the element assembly 110, and defines a portion ofthe surface of the outer electrode 120.

In the present preferred embodiment, the insulation layer 123 extendsacross the entirety in the width direction W of the element assembly 110at each end surface of the element assembly 110. As shown in FIG. 2,none of the inner electrodes 130 are located in a virtual plane P₁ thatlinks the position of an edge of the insulation layer 123 at the endsurface of the element assembly 110 on the one main surface 10 with theposition of a tip of the outer electrode 120 on the one main surface 10of the element assembly 110 in a shortest distance.

In the present preferred embodiment, as shown in FIG. 2, although noneof the inner electrodes 130 intersect with virtual lines defining thevirtual plane P₁ in a cross section of the electronic component 100 onan arbitrary surface parallel or substantially parallel to the sidesurface of the element assembly 110, the inner electrodes 130intersecting with the virtual lines may be included therein. However, itis preferable that none of the inner electrodes 130 intersect with thevirtual lines.

The insulation layer 123 is directly provided on the reinforcement layer122 at each end surface of the element assembly 110 such that at least aportion of the insulation layer 123 is located between the one mainsurface 10 of the element assembly 110 and the position of an edgeportion of the inner electrode 130 closest to the one main surface 10 ofthe element assembly 110 in the thickness direction T, which is adirection perpendicular or substantially perpendicular to the mainsurfaces of the element assembly 110.

To be more specific, in the case where a dimension of distance betweenthe one main surface 10 of the element assembly 110 and the edge portionon the one main surface 10 of the inner electrode 131 closest to the onemain surface 10 is L₁, a dimension of distance L₂ along the thicknessdirection T of the element assembly 110 between the one main surface 10of the element assembly 110 and the position of an end portion on theone main surface 10 of the insulation layer 123 satisfies a relation ofL₂<L₁ at each end surface of the element assembly 110.

In the present preferred embodiment, L₂>0; that is, of the reinforcementlayer 122 provided at each of the end surfaces of the element assembly110, only a portion of the reinforcement layer 122 on the one mainsurface 10 is not covered by the insulation layer 123. In the case wherea dimension of thickness of the element assembly 110 is L_(T), it ispreferable for a relation of L₂>L_(T)/10 to be satisfied for the reasonto be explained later. Accordingly, in the electronic component 100, itis preferable for both the relation of L₂<L₁ and the relation ofL₂>L_(T)/10 to be satisfied. The electronic component 100 satisfies arelation of L_(T)/10<L₂<L₁ in the present preferred embodiment.

The insulation layer 123 extends in the lengthwise direction L, which isa direction perpendicular or substantially perpendicular to the endsurface of the element assembly 110, at each of the side surfaces of theelement assembly 110. In the present preferred embodiment, theinsulation layer 123 extends across the entirety of each side surface ofthe element assembly 110 along the lengthwise direction L of the elementassembly 110. In other words, a portion of the insulation layer 123 isdirectly provided on the reinforcement layer 122 at each side surface ofthe element assembly 110. Another portion of the insulation layer 123 isdirectly provided on each side surface of the element assembly 110.

The insulation layer 123 provided at each end surface of the elementassembly 110 and the insulation layer 123 provided at each side surfaceof the element assembly 110 are connected with each other so as todefine a ring-shaped configuration. At each side surface of the elementassembly 110, L₂ is the dimension of distance along the thicknessdirection T of the element assembly 110 between the one main surface 10of the element assembly 110 and the position of the end portion on theone main surface 10 of the insulation layer 123.

Further, the insulation layer 123 covers the entirety of the other mainsurface 11 side of the element assembly 110. In other words, a portionof the insulation layer 123 is directly provided on the reinforcementlayer 122 at the other main surface 11 side of the element assembly 110.Another portion of the insulation layer 123 is directly provided on theother main surface 11 of the element assembly 110. The insulation layer123 covering the other main surface 11 side of the element assembly 110is connected with the insulation layer 123 provided at each end surfaceof the element assembly 110 and the insulation layer 123 provided ateach side surface of the element assembly 110, respectively.

As described above, portions of the insulation layer 123 are directlyprovided on the other main surface 11 of the element assembly 110 andthe side surfaces of the element assembly 110. The insulation layer 123has a higher adhesiveness with the element assembly 110 than with thereinforcement layer 122. Therefore, providing a portion of theinsulation layer 123 directly on the element assembly 110 makes itpossible to significantly reduce or prevent the separation of theinsulation layer 123 at the time of plating or mounting to be explainedlater.

As a material that configures the insulation layer 123, insulating resinsuch as a thermosetting curing insulating resin, an ultraviolet curinginsulating resin, or the like defining and serving as solder resist canbe used.

The Sn-containing layer 124 is provided on the reinforcement layer 122so as to cover the reinforcement layer 122 except for a portion of thereinforcement layer 122 that is covered by the insulation layer 123 anddefines another portion of the surface of the outer electrode 120.

In the present preferred embodiment, the Sn-containing layer 124 extendsfrom each end surface of the element assembly 110 to the one mainsurface 10 thereof. As described above, of the reinforcement layer 122provided at each end surface of the element assembly 110, only a portionof the reinforcement layer 122 on the one main surface 10 is not coveredby the insulation layer 123. Accordingly, at each end surface of theelement assembly 110, the Sn-containing layer 124 covers the portion ofthe reinforcement layer 122 that is positioned on the one main surface10 and is not covered by the insulation layer 123.

In addition, the Sn-containing layer 124 covers the reinforcement layer122 that is not covered by the insulation layer 123 at the one mainsurface 10 of the element assembly 110. Furthermore, at each sidesurface of the element assembly 110, the Sn-containing layer 124 coversa portion of the reinforcement layer 122 that is positioned on the onemain surface 10 and is not covered by the insulation layer 123.

As described above, the reinforcement layer 122 extends from the one endsurface of the element assembly 110 onto both the main surfaces and theside surfaces thereof. Further, the reinforcement layer 122 extends fromthe other end surface of the element assembly 110 onto both the mainsurfaces and the side surfaces thereof.

As such, the Sn-containing layer 124 extends from the one end surface ofthe element assembly 110 to the one main surface 10 and to the sidesurfaces thereof. Further, the Sn-containing layer 124 extends from theother end surface of the element assembly 110 to the one main surface 10and to the side surfaces thereof.

The Sn-containing layer 124 extending from the one end surface of theelement assembly 110 to the one main surface 10 as well as to the sidesurfaces of the element assembly 110 and the Sn-containing layer 124extending from the other end surface of the element assembly 110 to theone main surface 10 as well as to the side surfaces of the elementassembly 110, are separated from each other and not electricallyconnected.

As a material that configures the Sn-containing layer 124, Sn or a Snalloy, which has a preferable wettability with respect to solder, can beused.

Hereinafter, a non-limiting example of a method for manufacturing anelectronic component according to another preferred embodiment will bedescribed. FIG. 6 is a flowchart illustrating a non-limiting example ofa method for manufacturing an electronic component according to thepresent preferred embodiment. As shown in FIG. 6, the method includes aprocess of preparing the element assembly 110 (S100), and a process ofproviding an outer electrode 120 on the surface of the element assembly110 so as for the outer electrode 120 to be electrically connected withthe inner electrodes 130 (S110).

The element assembly 110 is preferably manufactured as follows.

First, a ceramic paste containing ceramic powder is applied by a diecoater method, a gravure coater method, a micro-gravure coater method,or the like in a sheet state, then the applied paste is dried so as toform a ceramic green sheet.

In some of a plurality of manufactured ceramic green sheets, aconductive paste for forming the inner electrodes is applied on theceramic green sheets by screen printing, ink jet printing, gravureprinting, or the like so that the applied paste forms a predeterminedpattern. In this manner, the ceramic green sheets in which theconductive pattern configuring the inner electrodes is formed and theceramic green sheets in which the conductive patter is not formed areprepared. Note that a known binder and a known solvent may be containedin the ceramic paste and the conductive paste for forming the innerelectrodes.

A predetermined number of the ceramic green sheets without theconductive pattern being formed therein are stacked on each other, aplurality of ceramic green sheets with the conductive pattern beingformed therein are sequentially stacked on the ceramic green sheets, andthen a predetermined number of the ceramic green sheets without theconductive pattern being formed therein are stacked on the sheets withthe conductive pattern being formed so as to manufacture a mother block.The mother block may be pressed in the stacking direction using ahydrostatic press method or the like as needed.

By dividing the mother block through cutting into a predetermined shape,a plurality of soft element assemblies each preferably having aparallelepiped shape are manufactured. The parallelepiped soft elementassemblies undergo barrel-polishing so that the corners of each of thesoft element assemblies are rounded. However, the barrel-polishing isnot necessarily needed to be carried out.

The soft element assembly is baked and hardened so as to manufacture theelement assembly 110. A temperature at which the baking is carried outis appropriately set in accordance with the respective types of ceramicmaterials and conductive materials, that is, for example, thetemperature is set within a range of no less than approximately 900° C.and no more than approximately 1,300° C.

The process of providing the outer electrode 120 (S110) includes aprocess of providing the sintered layer 121 containing a sintered metal(S111), a process of providing the reinforcement layer 122 that does notcontain Sn but contains Cu or Ni (S112), a process of providing theinsulation layer 123 formed of an electric insulation material (S113),and a process of providing the Sn-containing layer 124 that contains Sn(S114).

In the process of providing the sintered layer 121 (S111), the sinteredlayer 121 extends from each end surface of the element assembly 110 ontoat least the one main surface of the element assembly 110 so as to covereach end surface of the element assembly 110. In the present preferredembodiment, the conductive paste to become the sintered layer 121 isapplied to both end portions of the element assembly 110 by a dipmethod. In this manner, in the process of providing the sintered layer121 (S111), the sintered layer 121 extends from each end surface ofelement assembly 110 onto the main surfaces of the element assembly 110as well as onto the side surfaces thereof.

As described above, in the present preferred embodiment, the conductivepaste whose major component is Cu is applied on the surface of theelement assembly 110 and heated at a temperature of, for example,approximately 700° C. so that the sintered layer 121 is baked and fixedto the element assembly 110. A plurality of sintered layers 121 beinglayered on each other may be provided by repeating the application anddrying of the conductive paste.

In the process of providing the sintered layer (S111), the dielectriclayer 140 and the sintered layer 121 preferably are baked at the sametime. In other words, by carrying out baking after the conductive pasteis applied on the soft element assembly, the element assembly 110 andthe sintered layer 121 preferably are formed at the same time.

In the process of providing the reinforcement layer 122 (S112), thereinforcement layer 122 is provided on the sintered layer 121 so as tocover the entirety of the sintered layer 121. In the present preferredembodiment, the reinforcement layer 122 is preferably provided throughelectroplating. More specifically, the reinforcement layer 122 ispreferably provided through barrel-plating. A barrel accommodating theplurality of element assemblies 110 provided with the sintered layer 121is immersed in a plating liquid within a plating bath, and iselectrified while the barrel being rotated in the plating liquid, suchthat the reinforcement layer 122 is provided on the sintered layer 121.

In the process of providing the insulation layer 123 (S113), theinsulation layer 123 is directly provided on the reinforcement layer 122at each end surface of the element assembly 110 so as to extend in thewidth direction W, which is a direction perpendicular or substantiallyperpendicular to the side surface of the element assembly 110, and todefine a portion of the surface of the outer electrode 120.

In the present preferred embodiment, the insulation layer 122 ispreferably provided by spray-coating of insulating resin such as athermosetting curing insulating resin, an ultraviolet curing insulatingresin, or the like defining and serving as solder resist.

To be more specific, the plurality of element assemblies 110 eachprovided with the sintered layer 121 and the reinforcement layer 122 aremounted on a plate including a plurality of recesses. Each of theelement assemblies 110 provided with the sintered layer 121 and thereinforcement layer 122 is disposed so that the one main surface 10 isaccommodated in the recess. The recess is slightly larger than the shapeof the main surface 10 of the element assembly 110 provided with thesintered layer 121 and the reinforcement layer 122 when viewed fromabove. The dimension in depth of the recess is so set as to be equal orapproximately equal to the above-mentioned dimension L₂. As describedearlier, the dimension L₂ satisfies the relation of L_(T)/10<L₂<L₁.

With spray-coating performed in a state in which the element assembly110 is accommodated in the recess, the insulating resin preferably isapplied to a portion of the element assembly 110 that is notaccommodated in the recess. As a result, as shown in FIG. 1, theinsulation layer 123 preferably is provided at the end surfaces, theside surfaces, and the other main surface 11 side of the elementassembly 110.

As described above, in the present preferred embodiment, in the processof providing the insulation layer 123 (S113), the insulation layer 123is further provided on the reinforcement layer 122 at the side surfacesof the element assembly 110 so as to extend in the lengthwise directionL as a direction perpendicular or substantially perpendicular to the endsurface of the element assembly 110.

By setting the dimension in depth of the recess to be approximately thesame as the dimension L₂, in the process of providing the insulationlayer 123 (S113), the insulation layer 123 preferably is directlyprovided on the reinforcement layer 122 at each end surface of theelement assembly 110 so that at least a portion of the insulation layer123 is located between the one main surface 10 of the element assembly110 and the position of the edge portion of the inner electrode 130closest to the one main surface 10 of the element assembly 110 in thethickness direction T as a direction perpendicular or substantiallyperpendicular to the main surface of the element assembly 110.

In the case where a thermosetting curing insulating resin is used as theinsulating resin, the insulating resin is cured by heating the elementassembly 110 on which the spray-coating has been performed. In the casewhere an ultraviolet curing insulating resin is used as the insulatingresin, the insulating resin is cured by irradiating the element assembly110, on which the spray-coating has been performed, with ultravioletlight.

It is preferable for thickness of the insulation layer 123 formed of thecured insulating resin to be no less than approximately 10 μm and nomore than approximately 50 μm, for example. It is more preferable forthe thickness of the insulation layer 123 to be no less thanapproximately 15 μm and no more than approximately 30 μm, for example.

In the case where the thickness of the insulation layer 123 is smallerthan approximately 10 μm, because tensile strength of the insulationlayer 123 is insufficient, the insulation layer 123 can be separated orfractured at a time of plating to be explained later when agitation forplating is performed in a plating bath. In the case where the thicknessof the insulation layer 123 is larger than approximately 50 μm, becausethe insulation layer 123 is in a state of projecting to an outer sideportion from the shape of the electronic component, an external force islikely to act on the insulation layer 123 at the time of plating to beexplained later when the agitation for plating is made in the platingbath, which causes the insulation layer 123 to be easily separated.

The method for forming the insulation layer 123 is not intended to belimited to spray-coating; that is, for example, a dip method, a screenprinting method, a photolithography method, or the like may be usedinstead. As another method for forming the insulation layer 123, thefollowing may be used, for example. That is, in a state in which theplurality of element assemblies 110 provided with the sintered layer 121and the reinforcement layer 122 are held on a plate with a spacetherebetween, a softened insulating resin is poured over the plate, thusapplying the insulating resin on the surface of each of the elementassemblies 110 provided with the sintered layer 121 and thereinforcement layer 122.

In the process of providing the Sn-containing layer 124 (S114), theSn-containing layer 124 is provided so as to cover the reinforcementlayer 122 except for a portion of the reinforcement layer 122 that iscovered by the insulation layer 123 to define another portion of thesurface of the outer electrode 120.

In the present preferred embodiment, the Sn-containing layer 124 ispreferably provided through electroplating. More specifically, theSn-containing layer 124 is preferably provided through barrel-plating. Abarrel accommodating the plurality of element assemblies 110 providedwith the sintered layer 121, the reinforcement layer 122, and theinsulation layer 123 is immersed in a plating liquid within a platingbath, and is electrified while the barrel being rotated in the platingliquid, such that the Sn-containing layer 124 is provided on thereinforcement layer 122 except for a portion of the reinforcement layer122 that is covered by the insulation layer 123.

As described above, of the reinforcement layer 122 provided at each endsurface of the element assembly 110, only a portion thereof that is onthe one main surface 10 is not covered by the insulation layer 123.Accordingly, the Sn-containing layer 124 covers the portion of thereinforcement layer 122 that is positioned on the one main surface 10and is not covered by the insulation layer 123 at each end surface ofthe element assembly 110. Further, the Sn-containing layer 124 isconfigured to cover the reinforcement layer 122 that is not covered bythe insulation layer 123 at the one main surface 10 of the elementassembly 110. As a result, the Sn-containing layer 124 extends from eachend surface of the element assembly 110 to the main surface 10 thereof.

Furthermore, the Sn-containing layer 124 covers a portion of thereinforcement layer 122 that is positioned on the one main surface 10and is not covered by the insulation layer 123 at each side surface ofthe element assembly 110. Accordingly, the Sn-containing layer 124extends from the one end surface of the element assembly 110 to the onemain surface 10 of the element assembly 110 as well as to the sidesurfaces thereof. In addition, the Sn-containing layer 124 extends fromthe other end surface to the one main surface 10 of the element assembly110 as well as to the side surfaces thereof.

The electronic component 100 having been manufactured in the mannerdescribed above is mounted by soldering. As the solder, Sn—Sb basedsolder, Sn—Cu based solder, or Sn—Ag based solder can be used.

FIG. 7 is a perspective view illustrating a state in which theelectronic component according to the present preferred embodiment ismounted on a substrate by soldering. As shown in FIG. 7, the electroniccomponent 100 is disposed on a substrate 20 so that cream solder whichis patterned on the substrate 20 makes contact with the Sn-containinglayer 124 of the outer electrode 120, and then the solder reflow ismade, such that a solder fillet 30 is formed and the electroniccomponent 100 is mounted on the substrate 20.

In the electronic component 100 according to the present preferredembodiment, because the insulation layer 123 is provided on the surfaceof the outer electrode 120, the solder fillet 30 cannot wet onto theinsulation layer 123. Therefore, the fillet is provided only at aportion of the surface of the outer electrode 120 where theSn-containing layer 124 that is not covered by the insulation layer 122is positioned.

In other words, because the insulation layer 123 is provided so as toextend across the entirety of each end surface of the element assembly110 in the width direction W and across the entirety of each sidesurface of the element assembly 110 in the lengthwise direction L,wetting of the solder fillet 30 is reduced at the whole perimeter of theelement assembly 110.

In the outer electrode 120 of the electronic component 100 according tothe present preferred embodiment, as described above, because theinsulation layer 123 is directly provided on the reinforcement layer 122that does not contain Sn, the insulation layer 123 is not separated whenthe cream solder and the Sn-containing layer 124 are melted and jointedtogether at the time of the reflow. This makes it possible toeffectively reduce the wetting of the solder fillet 30.

Assuming that the insulation layer 123 is provided on the Sn-containinglayer 124, when the reflow is carried out and the cream solder and theSn-containing layer 124 are melted and jointed together, the insulationlayer 123 that has been positioned on the melted Sn-containing layer 124is separated. This allows the solder fillet to wet onto theSn-containing layer 124 exposed to the exterior because of theseparation of the insulation layer 123, thus making it difficult toeffectively reduce the wetting of the solder fillet.

In the electronic component 100 according to the present preferredembodiment, the insulation layer 123 is provided at least at each endsurface of the element assembly 110, thus making it possible to reducethe wetting of the solder fillet 30 and significantly reduce or preventthe generation of a crack in the element assembly 110 caused by tensilestress due to the thermal contraction of the solder fillet 30.

Furthermore, as described above, none of the inner electrodes 130 arelocated on the virtual plane P₁ that links the position of an edge inthe insulation layer 123 at the end surface of the element assembly 110on the one main surface 10 with the position of a tip of the outerelectrode 120 on the one main surface 10 in the shortest distance. If acrack is generated by the tensile stress due to the thermal contractionof the solder fillet 30, the crack is likely to develop along thevirtual surface P₁. Accordingly, because none of the inner electrodes130 are located on the virtual plane P₁, cutting of the inner electrodes130 due to the generation of a crack is significantly reduced orprevented. As a result, deterioration of electric characteristics of theelectronic component 100 due to the generation of a crack issignificantly reduced or prevented.

In addition, as described earlier, in the case where the dimension ofdistance between the one main surface 10 of the element assembly 110 andthe edge portion on the one main surface 10 of the inner electrode 130is L₁, L₂ is the dimension of distance along the thickness direction Tof the element assembly 110 between the one main surface 10 of theelement assembly 110 and the position of an end portion on the one mainsurface 10 of the insulation layer 123 at each end surface of theelement assembly 110, and the dimension of thickness of the elementassembly 110 is L_(T), the relation of L_(T)/10<L₂<L₁ is satisfied.

Satisfying the relation of L_(T)/10<L₂ makes it possible to form anadequate solder fillet 30 and ensure the orientation stability of theelectronic component 100 at the time of mounting. Further, falling-offof the electronic component 100 having been mounted from the substrate20 due to a shock or the like is significantly reduced or prevented.

It is preferable for the insulation layer 123 to cover the reinforcementlayer 122 so as to be positioned as the outermost layer at each sidesurface of the element assembly 110. With this, in the case where theplurality of electronic components 100 are mounted close to each other,even if the electronic components 100 are mounted in a state in whichthe side surfaces of the adjacent electronic components 100 make contactwith each other because of insufficient stability in orientation of theelectronic components 100 and the insulation layers 123 thereof are incontact with each other, it is possible to prevent the electroniccomponents 100 that are in contact with each other from beingelectrically short-circuited.

By satisfying the relation of L₂<L₁, because the solder fillet 30 is notoverlapping with a functional region as a region where the innerelectrodes 130 are stacked within the element assembly 110, it can bemade difficult for the tensile stress produced by the thermalcontraction of the solder fillet 30 to act on the functional region. Asa result, it is possible to significantly reduce or prevent thegeneration of a crack due to the thermal contraction of the solderfillet 30.

In addition, satisfying the relation of L₂<L₁ makes it possible toreduce generation of what is called “acoustic noise”. The reason forthis is as follows.

In the case where the element assembly 110 is configured with a materialhaving piezoelectricity or an electrostrictive property, if a DC voltagein which an AC voltage or an AC component is superposed is applied tothe electronic component 100, mechanical distortion vibration isgenerated in the electronic component 100. Sound is generated from thesubstrate 20 when the distortion vibration is propagated to thesubstrate 20. Sound of no less than approximately 20 Hz and no more thanapproximately 20 kHz serves as an audible sound and gives displeasure toa person. The above phenomenon is what is called “acoustic noise”.

In the electronic component 100, it is the functional region thatbecomes a generation source of the mechanical distortion vibration. Themechanical distortion vibration generated in the functional region ispropagated from the outer electrode 120 to the substrate 20 through thesolder fillet.

By satisfying the relation of L₂<L₁, because the solder fillet 30 is notoverlapping with the functional region, it is possible to reduce thevibration that is propagated from the functional region to the substrate20 through the solder fillet 30. As a result, the sound generated fromthe substrate 20 is reduced, in other words, the generation of the“acoustic noise” is reduced. In particular, this method, in which theabove relation is satisfied, is noticeably effective for electroniccomponents from which the “acoustic noise” is likely to be generated,such as a multilayer ceramic capacitor that includes the elementassembly 110 including the dielectric layer 140 including a dielectricmaterial whose relative permittivity ε_(r) is no less than approximately3000, a multilayer ceramic capacitor whose nominal electrostaticcapacity preferably is no less than approximately 10 μF, and so on.

Hereinafter, an electronic component and a method for manufacturing theelectronic component according to a second preferred embodiment of thepresent invention will be described. Note that because an electroniccomponent 100 a according to the second preferred embodiment differsfrom the electronic component 100 according to the first preferredembodiment only in a point that the electronic component 100 a includesa base layer, description of the other constituent elements is notrepeated herein.

Second Preferred Embodiment

FIG. 8 is a cross-sectional view illustrating a configuration of theelectronic component according to the second preferred embodiment of thepresent invention. FIG. 9 is a flowchart illustrating a method formanufacturing the electronic component according to the second preferredembodiment of the present invention. Note that FIG. 8 illustrates across section of the electronic component viewed from the same directionas in FIG. 2.

As shown in FIG. 8, an outer electrode 120 a of the electronic component100 a according to the second preferred embodiment of the presentinvention further includes a base layer 125 which is made of a materialdifferent from that of the reinforcement layer 122 and contains Cu orNi. The base layer 125 is provided between the sintered layer 121 andthe reinforcement layer 122 so as to cover the entirety of the sinteredlayer 121.

The base layer 125 is directly provided on the sintered layer 121 so asto cover the entirety of the sintered layer 121. In the presentpreferred embodiment, the sintered layer 121 extends from the one endsurface of the element assembly 110 onto the main surfaces of theelement assembly 110 and the side surfaces thereof. In addition, thesintered layer 121 extends from the other end surface of the elementassembly 110 onto the main surfaces of the element assembly 110 and theside surfaces thereof.

As such, the base layer 125 extends from the one end surface of theelement assembly 110 to the one main surface 10 of the element assembly110 and to the side surfaces thereof. In addition, the base layer 125extends from the other end surface of the element assembly 110 to theone main surface 10 of the element assembly 110 and to the side surfacesthereof.

As a material that configures the base layer 125, a material that ismade of a material different from the material configuring thereinforcement layer 122 such as Ni, a Ni alloy, Cu, or a Cu alloypreferably is used. In the present preferred embodiment, the base layer125 preferably is made of Cu, for example.

In the present preferred embodiment, the reinforcement layer 122 isprovided on the base layer 125 so as to cover the entirety of the baselayer 125. In the present preferred embodiment, the reinforcement layer122 preferably is made of Ni, for example.

As shown in FIG. 9, the method for manufacturing the electroniccomponent 100 a according to the present preferred embodiment includesthe step of preparing the element assembly 110 (S100), a step ofproviding the outer electrode 120 a on the surface of the elementassembly 110 so as to be electrically connected with the innerelectrodes 130 (S210).

The step of providing the outer electrode 120 a (S210) includes aprocess of providing the sintered layer 121 containing a sintered metal(S111), a step of providing the base layer 125 formed of a materialdifferent from that of the reinforcement layer 122 and containing Cu orNi (S211), the step of providing the reinforcement layer 122 containingNi or Cu (S112), the step of providing the insulation layer 123 formedof an electric insulation material (S113), and the step of providing theSn-containing layer 124 that contains Sn (S114).

In the step of providing the base layer 125 (S211), the base layer 125is provided between the sintered layer 121 and the reinforcement layer122 so as to cover the entirety of the sintered layer 121. In thepresent preferred embodiment, the base layer 125 is preferably providedthrough electroplating. More specifically, the base layer 125 ispreferably provided through barrel-plating. A barrel accommodating theplurality of element assemblies 110 provided with the sintered layer 121is immersed in a plating liquid within a plating bath, and iselectrified while the barrel being rotated in the plating liquid, suchthat the base layer 125 is provided on the sintered layer 121.

In the present preferred embodiment, the reinforcement layer 122 ispreferably provided through electroplating. More specifically, thereinforcement layer 122 is preferably provided through barrel-plating.That is, a barrel accommodating the plurality of element assemblies 110provided with the sintered layer 121 and the base layer 125 is immersedin a plating liquid within a plating bath, and is electrified while thebarrel being rotated in the plating liquid, such that the reinforcementlayer 122 is provided on the base layer 125.

Providing the reinforcement layer 122 on the base layer 125 makes itpossible to provide the reinforcement layer 122 more easily by platingin comparison with a case in which the reinforcement layer 122 isprovided on the sintered layer 121.

Also in the electronic component 100 a according to the presentpreferred embodiment, the insulation layer 123 is provided at least ateach end surface of the element assembly 110, thus making it possible toreduce the wetting of the solder fillet 30 and significantly reduce orprevent the generation of a crack in the element assembly 110 caused bytensile stress due to the thermal contraction of the solder fillet 30.

Hereinafter, an electronic component and a method for manufacturing theelectronic component according to a third preferred embodiment of thepresent invention will be described. Note that because an electroniccomponent 100 b according to the third preferred embodiment differs fromthe electronic component 100 a according to the second preferredembodiment only in a point that the electronic component 100 b includesa shield layer, description of the other constituent elements is notrepeated herein.

Third Preferred Embodiment

FIG. 10 is a cross-sectional view illustrating a configuration of theelectronic component according to the third preferred embodiment of thepresent invention. FIG. 11 is a flowchart illustrating a method formanufacturing the electronic component according to the third preferredembodiment of the present invention. Note that FIG. 10 illustrates across section of the electronic component viewed from the same directionas in FIG. 2.

As shown in FIG. 10, an outer electrode 120 b of the electroniccomponent 100 b according to the third preferred embodiment of thepresent invention further includes a shield layer 126 configured of amaterial different from that of the reinforcement layer 122 andcontaining Cu or Ni. The shield layer 126 is provided between thereinforcement layer 122 and the Sn-containing layer 124.

The shield layer 126 is provided on the reinforcement layer 122 so as tocover the reinforcement layer 122 except for a portion of thereinforcement layer 122 that is covered by the insulation layer 123. Inthe present preferred embodiment, the shield layer 126 extends from eachend surface of the element assembly 110 to the one main surface 10thereof. As described above, of the reinforcement layer 122 provided ateach end surface of the element assembly 110, only a portion thereof onthe one main surface 10 is not covered by the insulation layer 123.Accordingly, the shield layer 126 covers the portion of thereinforcement layer 122 that is not covered by the insulation layer 123and is positioned on the one main surface 10 at each end surface of theelement assembly 110.

Further, the shield layer 126 covers the reinforcement layer 122 that isnot covered by the insulation layer 123 at the one main surface 10 ofthe element assembly 110. Furthermore, the shield layer 126 covers aportion of the reinforcement layer 122 that is not covered by theinsulation layer 123 and is positioned on the one main surface 10 ateach side surface of the element assembly 110.

As described earlier, the reinforcement layer 122 extends from the oneend surface of the element assembly 110 onto the main surfaces of theelement assembly 110 and the side surfaces thereof. In addition, thereinforcement layer 122 extends from the other end surface of theelement assembly 110 onto the main surfaces of the element assembly 110and the side surfaces thereof.

As such, the shield layer 126 extends from the one end surface of theelement assembly 110 to the one main surface 10 of the element assembly110 and to the side surfaces thereof. In addition, the shield layer 126extends from the other end surface of the element assembly 110 to theone main surface 10 of the element assembly 110 and to the side surfacesthereof.

As a material that configures the shield layer 126, a material thatdiffers from the material configuring the reinforcement layer 122 suchas Ni, a Ni alloy, Cu, or a Cu alloy can be used. In the presentpreferred embodiment, the shield layer 126 is preferably made of Cu, forexample.

The shield layer 126 preferably is configured to overlie an end portionof the insulation layer 123 by several μm, for example. In this case, itis preferable for the insulation layer 123 to have a large surfaceroughness. Further, it is preferable for the dimension in length of theshield layer 126 at a portion thereof that overlies the end portion ofthe insulation layer 123 along the thickness direction T of the elementassembly 110 to be larger than the dimension in thickness of the shieldlayer 126. With this, the shield layer 126 overlying the end portion ofthe insulation layer 123 penetrates into recessed areas in the surfaceof the insulation layer 123 in a spike-shaped configuration, thusenhancing the adhesiveness between the shield layer 126 and theinsulation layer 123. As a result, the boundary between the insulationlayer 123 and the shield layer 126 is so tightly bonded that the solderfillet entering the boundary between the insulation layer 123 and theshield layer 126 is further significantly reduced or prevented at thetime of mounting.

As shown in FIG. 11, the method for manufacturing the electroniccomponent 100 b according to the present preferred embodiment includesthe process of preparing the element assembly 110 (S100), and a processof providing the outer electrode 120 b on the surface of the elementassembly 110 so as to be electrically connected with the innerelectrodes 130 (S310).

The process of providing the outer electrode 120 b (S310) includes theprocess of providing the sintered layer 121 including a sintered metal(S111), the process of providing the base layer 125 including a materialdifferent from that of the reinforcement layer 122 and containing Cu orNi (S211), the process of providing the reinforcement layer 122containing Ni or Cu (S112), the process of providing the insulationlayer 123 including an electric insulation material (S113), a process ofproviding the shield layer 126 configured of a material different fromthat of the reinforcement layer 122 and containing Cu or Ni (S311), andthe process of providing the Sn-containing layer 124 that includes Sn(S114).

In the process of providing the shield layer 126 (S311), the shieldlayer 126 is provided so as to cover the reinforcement layer 122 exceptfor a portion of the reinforcement layer 122 that is covered by theinsulation layer 123. In the present preferred embodiment, the shieldlayer 126 is provided through electroplating. More specifically, theshield layer 126 is preferably provided through the barrel-plating. Thatis, the barrel accommodating the plurality of element assemblies 110provided with the sintered layer 121, the base layer 125, thereinforcement layer 122, and the insulation layer 123 is immersed in aplating liquid within the plating bath, and is electrified while thebarrel being rotated in the plating liquid, such that the shield layer126 is provided on the reinforcement layer 122 except for a portion ofthe reinforcement layer 122 that is covered by the insulation layer 123.

As described above, of the reinforcement layer 122 provided at each endsurface of the element assembly 110, only a portion thereof that is onthe one main surface 10 is not covered by the insulation layer 123.Accordingly, the shield layer 126 covers the portion of thereinforcement layer 122 that is positioned on the one main surface 10and is not covered by the insulation layer 123 at each end surface ofthe element assembly 110. Further, the shield layer 126 is configured tocover the reinforcement layer 122 that is not covered by the insulationlayer 123 at the one main surface 10 of the element assembly 110. As aresult, the shield layer 126 extends from each end surface of theelement assembly 110 to the main surface 10 thereof.

Furthermore, the shield layer 126 covers a portion of the reinforcementlayer 122 that is positioned on the one main surface 10 and is notcovered by the insulation layer 123 at each of the side surfaces of theelement assembly 110. Accordingly, the shield layer 126 extends from theone end surface of the element assembly 110 to the one main surface 10of the element assembly 110 as well as to each of the side surfacesthereof. In addition, the shield layer 126 extends from the other endsurface of the element assembly 110 to the one main surface 10 of theelement assembly 110 as well as to each of the side surfaces thereof.

In the process of providing the Sn-containing layer 124 (S114), theSn-containing layer 124 is provided on the shield layer 126 so as tocover the reinforcement layer 122 except for a portion of thereinforcement layer 122 that is covered by the insulation layer 123 andto define another portion of the surface of the outer electrode 120.

In the present preferred embodiment, the Sn-containing layer 124 ispreferably provided through electroplating. More specifically, theSn-containing layer 124 is preferably provided through barrel-plating.That is, a barrel accommodating the plurality of element assemblies 110provided with the sintered layer 121, the base layer 125, thereinforcement layer 122, the insulation layer 123, and the shield layer126 is immersed in a plating liquid within a plating bath, and iselectrified while the barrel being rotated in the plating liquid, suchthat the Sn-containing layer 124 is provided on the shield layer 126. Asa result, the Sn-containing layer 124 extends from each end surface ofthe element assembly 110 to the one main surface 10 thereof. Further,the Sn-containing layer 124 is provided on the shield layer 126 at eachside surface of the element assembly 110.

As such, the Sn-containing layer 124 extends from the one end surface ofthe element assembly 110 to the one main surface 10 and to the sidesurfaces of the element assembly 110. Further, the Sn-containing layer124 extends from the other end surface of the element assembly 110 tothe one main surface 10 and to the side surfaces of the element assembly110.

Also in the electronic component 100 b according to the presentpreferred embodiment, the insulation layer 123 is provided at least ateach end surface of the element assembly 110, thus making it possible toreduce the wetting of the solder fillet 30 and significantly reduce orprevent the generation of a crack in the element assembly 110 caused bytensile stress due to the thermal contraction of the solder fillet 30.Note that the base layer 125 may not be provided in some case.

Hereinafter, an electronic component according to a fourth preferredembodiment of the present invention will be described. Note that becausean electronic component 400 according to the fourth preferred embodimentdiffers from the electronic component 100 according to the firstpreferred embodiment only in a point that the positions of theinsulation layer and Sn-containing layer are different from those in thefirst preferred embodiment, description of the other constituentelements is not repeated herein.

Fourth Preferred Embodiment

FIG. 12 is a perspective view illustrating an external appearance of theelectronic component according to the fourth preferred embodiment of thepresent invention. FIG. 13 is a cross-sectional view of the electroniccomponent taken along a XIII-XIII arrow line in FIG. 12.

As shown in FIGS. 12 and 13, the electronic component 400 according tothe fourth preferred embodiment of the present invention includes theelement assembly 110 and outer electrodes 420 provided on the surface ofthe element assembly 110 and electrically connected with the innerelectrodes 130. The outer electrodes 420 each include the sintered layer121 including a sintered metal, the reinforcement layer 122 that doesnot contain Sn but includes Cu or Ni, an insulation layer 423 includingan electric insulation material, and a Sn-containing layer 424 thatincludes Sn.

The insulation layer 423 is directly provided on the reinforcement layer122 at each end surface so as to extend in the width direction W, whichis a direction perpendicular or substantially perpendicular to the sidesurface of the element assembly 110, and defines a portion of a surfaceof the outer electrode 420.

In the present preferred embodiment, the insulation layer 423 extendsacross the entirety in the width direction W of the element assembly 110at each end surface of the element assembly 110. As shown in FIG. 13,none of the inner electrodes 130 are located on the virtual plane P₁that links the position of an edge of the insulation layer 423 at theend surface of the element assembly 110 on the one main surface 10thereof with the position of a tip of the outer electrode 420 on the onemain surface 10 of the element assembly 110 in a shortest distance.

Note that in the present preferred embodiment, as shown in FIG. 13,although none of the inner electrodes 130 intersect with the virtuallines defining the virtual plane P₁ in a cross section of the electroniccomponent 400 on an arbitrary surface parallel or substantially parallelto the side surface of the element assembly 110, the inner electrodes130 intersecting with the virtual lines preferably are included therein.However, it is preferable that none of the inner electrodes 130intersect with the virtual lines.

The insulation layer 423 is directly provided on the reinforcement layer122 at each end surface of the element assembly 110 so that at least aportion of the insulation layer 423 is located between the one mainsurface 10 of the element assembly 110 and the position of an edgeportion of the inner electrode 130 closest to the one main surface 10 ofthe element assembly 110 in the thickness direction T, which is adirection perpendicular or substantially perpendicular to the mainsurface of the element assembly 110.

To be more specific, in the case where the dimension of distance betweenthe one main surface 10 of the element assembly 110 and the edge portionon the one main surface 10 of the inner electrode 130 is L₁, thedimension of distance L₂ along the thickness direction T of the elementassembly 110 between the one main surface 10 of the element assembly 110and the position of an end portion on the one main surface 10 of theinsulation layer 423 satisfies the relation of L₂<L₁, at each endsurface of the element assembly 110.

In the present preferred embodiment, L₂>0; that is, of the reinforcementlayer 122 provided at each of the end surfaces of the element assembly110, a portion of the reinforcement layer 122 on the one main surface 10is not covered by the insulation layer 423. In the case where thedimension of thickness of the element assembly 110 is L_(T), it is morepreferable for the relation of L₂>L_(T)/10 to be satisfied. Accordingly,in the electronic component 400, it is preferable for both the relationof L₂<L₁ and the relation of L₂>L_(T)/10 to be satisfied. The electroniccomponent 400 satisfies the relation of L_(T)/10<L₂<L₁ in the presentpreferred embodiment.

As shown in FIG. 13, the insulation layer 423 is provided such that noneof the inner electrodes 130 are located in a virtual plane P₂ that linksthe position of an edge of the insulation layer 423 at the end surfaceof the element assembly 110 on the other main surface 11 side with theposition of a tip of the outer electrode 420 on the other main surface11 side of the element assembly 110 in a shortest distance.

Note that in the present preferred embodiment, as shown in FIG. 13,although none of the inner electrodes 130 intersect with virtual linesdefining the virtual plane P₂ in a cross section of the electroniccomponent 400 on an arbitrary surface parallel or substantially parallelto the side surface of the element assembly 110, the inner electrodes130 intersecting with the virtual lines may be included therein.However, it is preferable that none of the inner electrodes 130intersect with the virtual lines.

The insulation layer 423 is directly provided on the reinforcement layer122 at each end surface of the element assembly 110 such that at least aportion of the insulation layer 423 is located between the other mainsurface 11 of the element assembly 110 and the position of an edgeportion of the inner electrode 130 closest to the other main surface 11of the element assembly 110 in the thickness direction T, which is adirection perpendicular or substantially perpendicular to the mainsurface of the element assembly 110.

To be more specific, in the case where a dimension of distance betweenthe other main surface 11 of the element assembly 110 and an edgeportion on the other main surface 11 side of the inner electrode 130closest to the other main surface is L₃, a dimension of distance L₄along the thickness direction T of the element assembly 110 between theother main surface 11 of the element assembly 110 and the position of anend portion on the other main surface 11 side of the insulation layer423 satisfies a relation of L₄<L₃, at each end surface of the elementassembly 110.

In the present preferred embodiment, L₄>0; that is, of the reinforcementlayer 122 provided at each of the end surfaces of the element assembly110, a portion of the reinforcement layer 122 on the other main surface11 side is not covered by the insulation layer 423. In the case wherethe dimension of thickness of the element assembly 110 is L_(T), it ismore preferable for a relation of L₄>L_(T)/10 to be satisfied.Accordingly, in the electronic component 400, it is preferable for boththe relation of L₄<L₃ and the relation of L₄>L_(T)/10 to be satisfied.The electronic component 400 satisfies a relation of L_(T)/10<L₄<L₃ inthe present preferred embodiment.

The insulation layer 423 extends in the lengthwise direction L, which isa direction perpendicular or substantially perpendicular to the endsurface of the element assembly 110, at each side surface of the elementassembly 110. In the present preferred embodiment, the insulation layer423 extends across the entirety of each side surface of the elementassembly 110 along the lengthwise direction L of the element assembly110. In other words, a portion of the insulation layer 423 is directlyprovided on the reinforcement layer 122 at each side surface of theelement assembly 110. Another portion of the insulation layer 423 isdirectly provided on each side surface of the element assembly 110.

The insulation layer 423 provided at each end surface of the elementassembly 110 and the insulation layer 423 provided at each side surfaceof the element assembly 110 are connected with each other so as todefine a ring-shaped configuration. At each side surface of the elementassembly 110, L₂ is the dimension of distance along the thicknessdirection T of the element assembly 110 between the one main surface 10of the element assembly 110 and the position of the end portion on theone main surface 10 of the insulation layer 423. At each side surface ofthe element assembly 110, L₄ is the dimension of distance along thethickness direction T of the element assembly 110 between the other mainsurface 11 of the element assembly 110 and the position of the endportion on the other main surface 11 side of the insulation layer 423.In the present preferred embodiment, the dimension L₂ and the dimensionL₄ are the same.

As a method for forming the insulation layer 423, the following may beused, for example. That is, in a state in which the plurality of elementassemblies 110 provided with the sintered layer 121 and thereinforcement layer 122 are arranged with a space therebetween andsandwiched between two elastic plates, a softened insulating resin ispoured between the two plates, thus applying the insulating resin on thesurface of the element assemblies 110 provided with the sintered layer121 and the reinforcement layer 122. Through this, because theinsulating resin does not adhere to the element assembly 110 providedwith the sintered layer 121 and the reinforcement layer 122 at portionsthat are sunk in the two plates, the insulation layer 423 preferably isformed.

The Sn-containing layer 424 is provided on the reinforcement layer 122so as to cover the reinforcement layer 122 except for a portion of thereinforcement layer 122 that is covered by the insulation layer 423, anddefines another portion of the surface of the outer electrode 420.

In the present preferred embodiment, the Sn-containing layer 424 extendsfrom each end surface of the element assembly 110 to the one mainsurface 10 of the element assembly 110 as well as to the other mainsurface 11 side thereof. As described before, of the reinforcement layer122 provided at each end surface of the element assembly 110, a portionof the reinforcement layer 122 on the one main surface 10 and a portionof the reinforcement layer 122 on the other main surface 11 side are notcovered by the insulation layer 423. Accordingly, at each end surface ofthe element assembly 110, the Sn-containing layer 424 covers the portionof the reinforcement layer 122 positioned on the one main surface 10 andthe portion of the reinforcement layer 122 positioned on the other mainsurface 11 side.

Further, the Sn-containing layer 424 covers the reinforcement layer 122that is not covered by the insulation layer 423 at the one main surface10 of the element assembly 110 and the other main surface 11 sidethereof. Furthermore, at each side surface of the element assembly 110,the Sn-containing layer 424 covers a portion of the reinforcement layer122 that is positioned on the one main surface 10 and is not covered bythe insulation layer 423 and a portion of the reinforcement layer 122that is positioned on the other main surface 11 side and is not coveredby the insulation layer 423.

As described earlier, the reinforcement layer 122 extends from the oneend surface of the element assembly 110 onto both the main surfaces andthe side surfaces of the element assembly 110. Further, thereinforcement layer 122 extends from the other end surface of theelement assembly 110 onto both the main surfaces and the side surfacesof the element assembly 110.

As such, the Sn-containing layer 424 extends from the one end surface ofthe element assembly 110 to the one main surface 10 and to the sidesurfaces of the element assembly 110. Likewise, the Sn-containing layer424 extends from the one end surface of the element assembly 110 to theother main surface 11 side and to the side surfaces of the elementassembly 110.

Furthermore, the Sn-containing layer 424 extends from the other endsurface of the element assembly 110 to the one main surface 10 and tothe side surfaces of the element assembly 110. Likewise, theSn-containing layer 424 extends from the other end surface of theelement assembly 110 to the other main surface 11 side and to the sidesurfaces of the element assembly 110.

In the present preferred embodiment, in the outer electrode 420 of theelectronic component 400, either of the one main surface 10 and theother main surface 11 side of the element assembly 110 can be selectedas a mounting surface with respect to the substrate 20.

In other words, in the outer electrode 420 of the electronic component400, regardless of which one of the one main surface 10 and the othermain surface 11 side of the element assembly 110 is selected as themounting surface, it is possible to reduce the wetting of the solderfillet 30 and significantly reduce or prevent the generation of a crackin the element assembly 110 caused by tensile stress due to the thermalcontraction of the solder fillet 30.

Therefore, in the electronic component 400 according to the presentpreferred embodiment, the electronic component 400 can be mountedwithout being limited by the orientation of the electronic component 400in the thickness direction T of the element assembly 110.

Hereinafter, an electronic component according to a fifth preferredembodiment of the present invention will be described. Because anelectronic component 500 according to the fifth preferred embodimentdiffers from the electronic component 100 according to the firstpreferred embodiment only in a point that the stacking direction of theinner electrodes is different from that in the first preferredembodiment, description of the other constituent elements is notrepeated herein.

Fifth Preferred Embodiment

FIG. 14 is a perspective view illustrating an external appearance of theelectronic component according to the fifth preferred embodiment of thepresent invention. FIG. 15 is a cross-sectional view of the electroniccomponent taken along a XV-XV arrow line in FIG. 14. FIG. 16 is across-sectional view of the electronic component taken along a XVI-XVIarrow line in FIG. 14. FIG. 17 is a cross-sectional view of theelectronic component taken along a XVII-XVII arrow line in FIG. 15 andof the electronic component taken along the XVII-XVII arrow line in FIG.16 as well. FIG. 18 is a cross-sectional view of the electroniccomponent taken along a XVIII-XVIII arrow line in FIG. 15 and of theelectronic component taken along the XVIII-XVIII arrow line in FIG. 16as well. In FIG. 14, a lengthwise direction of an element assembly isindicated by “L”, a width direction of the element assembly is indicatedby “W”, and a thickness direction of the element assembly is indicatedby “T”.

As shown in FIGS. 14 through 18, the electronic component 500 accordingto the fifth preferred embodiment of the present invention includes aparallelepiped-shaped element assembly 510 in which the inner electrodes130 are embedded, and the outer electrode 120 provided on a surface ofthe element assembly 510 and electrically connected with the innerelectrodes 130.

In the element assembly 510, the dielectric layers 140 and the innerelectrodes 130 having a plate-shaped are alternately stacked. Thestacking direction of the dielectric layers 140 and the inner electrodes130 is perpendicular or substantially perpendicular to both thelengthwise direction L of the element assembly 510 and the thicknessdirection T of the element assembly 510. In other words, the stackingdirection of the dielectric layers 140 and the inner electrodes 130 isparallel or substantially parallel to the width direction W of theelement assembly 510.

The element assembly 510 includes a pair of main surfaces perpendicularor substantially perpendicular to the thickness direction T, a pair ofend surfaces perpendicular or substantially perpendicular to thelengthwise direction L, and a pair of side surfaces perpendicular orsubstantially perpendicular to the width direction W. The pair of mainsurfaces includes the one main surface 10 and the other main surface 11.The one main surface 10 is a surface positioned on a mounting surfaceside of the electronic component 500 when the electronic component 500is mounted. In other words, when the electronic component 500 is mountedon a substrate, the one main surface 10 is a surface that opposes thesubstrate.

As described above, the element assembly 510 includes the pair of sidesurfaces perpendicular or substantially perpendicular to the stackingdirection of the dielectric layers 140 and the inner electrodes 130, thepair of main surfaces respectively connecting the side surfaces, and thepair of end surfaces respectively perpendicular or substantiallyperpendicular to the pair of main surfaces and the pair of sidesurfaces.

Although the element assembly 510 preferably has a parallelepiped shapewith its corners being rounded, the corners of the assembly may not berounded. Furthermore, concave and/or convex portions may be provided inany one of the surfaces included in the pair of main surfaces, the pairof end surfaces, or the pair of side surfaces.

In the inner electrodes 130 adjacent to each other and opposing eachother, one inner electrode 130 is electrically connected with the outerelectrode 120 at one end surface of the element assembly 510, while theother inner electrode 130 is electrically connected with the outerelectrode 120 at the other end surface of the element assembly 510.

In the present preferred embodiment, the insulation layer 123 extendsacross the entirety in the width direction of the element assembly 510at each end surface of the element assembly 510. As shown in FIGS. 15and 16, none of the inner electrodes 130 are located in a virtual planeP₁ that links the position of an edge in the insulation layer 123 at theend surface of the element assembly 510 on the one main surface 10 withthe position of a tip of the outer electrode 120 on the one main surface10 of the element 510 in a shortest distance.

Note that in the present preferred embodiment, as shown in FIGS. 15 and16, although none of the inner electrodes 130 intersect with virtuallines defining the virtual plane P₁ in a cross section of the electroniccomponent 500 on an arbitrary surface parallel or substantially parallelto the side surface of the element assembly 510, the inner electrodes130 intersecting with the virtual lines may be included therein.However, it is preferable that none of the inner electrodes 130intersect with the virtual lines.

The insulation layer 123 is directly provided on the reinforcement layer122 at each end surface of the element assembly 510 so that at least aportion of the insulation layer 123 is located between the one mainsurface 10 of the element assembly 510 and the position of an edgeportion of the inner electrode 130 closest to the one main surface 10 ofthe element assembly 510 in the thickness direction T, which is adirection perpendicular or substantially perpendicular to the mainsurface of the element assembly 510.

To be more specific, in the case where a dimension of distance betweenthe one main surface 10 of the element assembly 510 and an edge on theone main surface 10 of the inner electrode 130 is L₅, the dimension ofdistance L₂ along the thickness direction T of the element assembly 510between the one main surface 10 of the element assembly 510 and theposition of an end portion on the one main surface 10 of the insulationlayer 123 satisfies a relation of L₂<L₅, at each end surface of theelement assembly 510.

In the present preferred embodiment, L₂>0; that is, of the reinforcementlayer 122 provided at each of the end surfaces of the element assembly510, only a portion of the reinforcement layer 122 on the one mainsurface 10 is not covered by the insulation layer 123. In the case wherethe dimension of thickness of the element assembly 510 is L_(T), it ispreferable for the relation of L₂>L_(T)/10 to be satisfied. Accordingly,in the electronic component 500, it is preferable for both the relationof L₂<L₅ and the relation of L₂>L_(T)/10 to be satisfied. The electroniccomponent 500 satisfies a relation of L_(T)/10<L₂<L₅ in the presentpreferred embodiment.

Further, the insulation layer 123 extends in the lengthwise direction L,which is a direction perpendicular or substantially perpendicular to theend surface of the element assembly 510, at each of the side surfaces ofthe element assembly 510. In the present preferred embodiment, theinsulation layer 123 extends across the entirety of each side surface ofthe element assembly 510 along the lengthwise direction L of the elementassembly 510. In other words, a portion of the insulation layer 123 isdirectly provided on the reinforcement layer 122 at each side surface ofthe element assembly 510. Another portion of the insulation layer 123 isdirectly provided on each side surface of the element assembly 510.

The insulation layer 123 provided at each end surface of the elementassembly 510 and the insulation layer 123 provided at each side surfaceof the element assembly 510 are connected with each other so as todefine a ring-shaped configuration. At each side surface of the elementassembly 510, L₂ is the dimension of distance along the thicknessdirection T of the element assembly 510 between the one main surface 10of the element assembly 510 and the position of the end portion on theone main surface 10 of the insulation layer 123.

Further, the insulation layer 123 covers the entirety of the other mainsurface 11 side of the element assembly 510. In other words, a portionof the insulation layer 123 is directly provided on the reinforcementlayer 122 at the other main surface side of the element assembly 510.Another portion of the insulation layer 123 is directly provided on theother main surface 11 of the element assembly 510. The insulation layer123 covering the other main surface 11 side of the element assembly 510is connected with the insulation layer 123 provided at each end surfaceof the element assembly 510 and the insulation layer 123 provided ateach side surface of the element assembly 510, respectively.

As described above, portions of the insulation layer 123 are directlyprovided on the other main surface 11 of the element assembly 510 andthe side surfaces of the element assembly 510. The insulation layer 123has a higher adhesiveness with the element assembly 510 than that withthe reinforcement layer 122. Therefore, providing a portion of theinsulation layer 123 directly on the element assembly 510 makes itpossible to significantly reduce or prevent the separation of theinsulation layer 123 at the time of plating or mounting.

In the present preferred embodiment, the Sn-containing layer 124 extendsfrom each end surface of the element assembly 510 to the one mainsurface 10. As described above, of the reinforcement layer 122 providedat each end surface of the element assembly 510, only a portion of thereinforcement layer 122 on the one main surface 10 is not covered by theinsulation layer 123. Accordingly, at each end surface of the elementassembly 510, the Sn-containing layer 124 covers the portion of thereinforcement layer 122 that is positioned on the one main surface 10and is not covered by the insulation layer 123.

In addition, the Sn-containing layer 124 covers the reinforcement layer122 that is not covered by the insulation layer 123 at the one mainsurface 10 of the element assembly 510. Furthermore, at each sidesurface of the element assembly 510, the Sn-containing layer 124 coversa portion of the reinforcement layer 122 that is positioned on the onemain surface 10 and is not covered by the insulation layer 123.

As described above, the reinforcement layer 122 extends from the one endsurface of the element assembly 510 onto both the main surfaces and theside surfaces thereof. Further, the reinforcement layer 122 extends fromthe other end surface of the element assembly 510 onto both the mainsurfaces and the side surfaces thereof.

As such, the Sn-containing layer 124 extends from the one end surface ofthe element assembly 510 to the one main surface 10 and to the sidesurfaces thereof. Further, the Sn-containing layer 124 extends from theother end surface of the element assembly 510 to the one main surface 10and to the side surfaces thereof.

The Sn-containing layer 124 extending from the one end surface of theelement assembly 510 to the one main surface 10 as well as to the sidesurfaces of the element assembly 510 and the Sn-containing layer 124extending from the other end surface of the element assembly 510 to theone main surface 10 as well as to the side surfaces of the elementassembly 510, are separated from each other and not electricallyconnected.

Also in the electronic component 500 according to the present preferredembodiment, the insulation layer 123 is provided at least at each endsurface of the element assembly 510, thus making it possible to reducethe wetting of the solder fillet 30 and significantly reduce or preventthe generation of a crack in the element assembly 510 caused by tensilestress due to the thermal contraction of the solder fillet 30.

As described above, none of the inner electrodes 130 are located on thevirtual plane P₁ that links the position of an edge of the insulationlayer 123 at the end surface of the element assembly 510 on the one mainsurface 10 with the position of a tip of the outer electrode 120 on theone main surface 10 in a shortest distance. If a crack is generated bythe tensile stress due to the thermal contraction of the solder fillet,the crack is likely to develop along the virtual surface P₁.Accordingly, because none of the inner electrodes 130 are located on thevirtual plane P₁, cutting of the inner electrodes 130 due to thegeneration of a crack is significantly reduced or prevented. As aresult, deterioration of electric characteristics of the electroniccomponent 500 due to the generation of a crack is significantly reducedor prevented.

In addition, as described earlier, in the case where the dimension ofdistance between the one main surface 10 of the element assembly 510 andthe edge portion on the one main surface of the inner electrode 130 isL₅, L₂ is the dimension of distance along the thickness direction T ofthe element assembly 510 between the one main surface 10 of the elementassembly 510 and the position of an end portion on the one main surface10 of the insulation layer 123 at each end surface of the elementassembly 510, and the dimension of thickness of the element assembly 510is L_(T), the relation of L_(T)/10<L₂<L₅ is satisfied.

Satisfying the relation of L_(T)/10<L₂ makes it possible to form anadequate solder fillet and ensure orientation stability of theelectronic component 500 at the time of mounting. Further, falling-offof the electronic component 500 having been mounted from the substratedue to a shock or the like is significantly reduced or prevented.

It is preferable for the insulation layer 123 to cover the reinforcementlayer 122 so as to be positioned as the outermost layer at each sidesurface of the element assembly 510. With this, in the case where theplurality of electronic components 500 are mounted close to each other,even if the electronic components 500 are mounted in a state in whichthe side surfaces of the adjacent electronic components 500 make contactwith each other because of insufficient stability in orientation of theelectronic components 500 and consequently the insulation layers 123thereof are in contact with each other, it is possible to prevent theelectronic components 500 that are in contact with each other from beingelectrically short-circuited.

By satisfying the relation of L₂<L₅, because the solder fillet is notoverlapping with a functional region as a region where the innerelectrodes 130 are stacked within the element assembly 510, the tensilestress produced by thermal contraction of the solder fillet can be madedifficult to act on the functional region. As a result, it is possibleto significantly reduce or prevent the generation of a crack due to thethermal contraction of the solder fillet.

The stacking directions of the inner electrodes 130 in the electroniccomponent 100 a according to the second preferred embodiment, theelectronic component 100 b according to the third preferred embodiment,and the electronic component 400 according to the fourth preferredembodiment may respectively be set to be the same as the stackingdirection of the electronic components 500 in the present preferredembodiment.

It should be noted that the preferred embodiments disclosed in thepresent specification are merely examples and are not limiting in anyway. The scope of the present invention is not indicated by thedescription made above, but by the appended claims, and further,meanings equivalent to the appended claims and any modification that ismade within the range of the appended claims are intended to be includedin the scope of the present invention.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

What is claimed is:
 1. A method for manufacturing an electroniccomponent comprising the steps of: preparing an element assembly inwhich inner electrodes are embedded and including a pair of mainsurfaces, a pair of side surfaces respectively connecting the pair ofmain surfaces, and a pair of end surfaces respectively perpendicular orsubstantially perpendicular to the pair of main surfaces and the pair ofside surfaces; and providing an outer electrode on at least one of thesurfaces of the element assembly so that the outer electrode iselectrically connected with the inner electrodes; wherein the step ofproviding the outer electrode includes a step of providing a sinteredlayer including a sintered metal, a step of providing a reinforcementlayer that does not contain Sn but includes Cu or Ni, a step ofproviding an insulation layer including an electric insulation material,and a step of providing a Sn-containing layer including Sn; in the stepof providing the sintered layer, the sintered layer extends from each ofthe pair of end surfaces onto at least one of the main surfaces so as tocover each of the pair of end surfaces; in the step of providing thereinforcement layer, the reinforcement layer is provided so as to coveran entirety of the sintered layer; in the step of providing theinsulation layer, the insulation layer is directly provided on thereinforcement layer at each of the pair of end surfaces to extend in adirection perpendicular or substantially perpendicular to the pair ofside surfaces so as to define a portion of a surface of the outerelectrode; and in the step of providing the Sn-containing layer, theSn-containing layer is provided to cover the reinforcement layer exceptfor a portion of the reinforcement layer that is covered by theinsulation layer so as to define another portion of the surface of theouter electrode.
 2. The method for manufacturing an electronic componentaccording to claim 1, wherein in the step of providing the Sn-containinglayer, the Sn-containing layer extends from each of the pair of endsurfaces to one of the main surfaces.
 3. The method for manufacturing anelectronic component according to claim 2, wherein in the step ofproviding the outer electrode, the outer electrode is provided so thatnone of the inner electrodes are located in a virtual plane which linksa position of an edge of the insulation layer at the end surface on oneof the pair of main surfaces with a position of a tip of the outerelectrode on one of the pair of main surfaces in a shortest distance. 4.The method for manufacturing an electronic component according to claim2, wherein in the step of providing the insulation layer, the insulationlayer is provided on the reinforcement layer at each of the pair of endsurfaces so that at least a portion of the insulation layer is locatedbetween one of the pair of main surfaces and a position of an edgeportion of the inner electrode closest to one of the pair of the mainsurfaces in a direction perpendicular or substantially perpendicular tothe main surface.
 5. The method for manufacturing an electroniccomponent according to claim 1, wherein in the step of providing thesintered layer, the sintered layer is provided so as to extend from eachof the pair of end surfaces onto each of the side surfaces; and in thestep of providing the insulation layer, the insulation layer is providedon the reinforcement layer at each of the pair the side surfaces so asto extend in a direction perpendicular or substantially perpendicular tothe end surface.
 6. The method for manufacturing an electronic componentaccording to claim 1, wherein the step of providing the outer electrodefurther includes a step of providing a base layer which is formed of amaterial different from a material of the reinforcement layer andcontains Cu or Ni; and in the step of providing the base layer, the baselayer is provided between the sintered layer and the reinforcement layerso as to cover an entirety of the sintered layer.
 7. The method formanufacturing an electronic component according to claim 1, wherein thestep of providing the outer electrode further includes a step ofproviding a shield layer which is formed of a material different from amaterial of the reinforcement layer and contains Cu or Ni; and in thestep of providing the shield layer, the shield layer is provided betweenthe reinforcement layer and the Sn-containing layer.
 8. The method formanufacturing an electronic component according to claim 1, where thestep of providing the sintered layer, includes a step of baking adielectric layer included in the element assembly and the sintered layerat the same time.
 9. The method for manufacturing an electroniccomponent according to claim 1, wherein the electronic component is oneof a ceramic capacitor, a piezoelectric component, a thermistor, and aninductor.